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dc.date2012-03-28T23:08:39Z
dc.date2012-03-28T23:08:39Z
dc.date2006-07-06
dc.date2012-06-12T22:36:39Z
dc.date2012-06-12T22:36:39Z
dc.date2012-06-12
dc.date.accessioned2012-10-08T16:57:30Z
dc.date.available2012-10-08T16:57:30Z
dc.date.issued2012-10-08
dc.identifierJ. Vac. Sci. Technol. B 24„4,1873-1877 (2006)
dc.identifier1071-1023
dc.identifierhttp://hdl.handle.net/123456789/981
dc.identifierhttp://www.repositoriodigital.ipn.mx/handle/123456789/4973
dc.identifier.urihttps://repositorio.leon.uia.mx/xmlui/123456789/92352
dc.descriptionY2O3 films were deposited on c-Si substrates at temperatures in the 400–550 °C range, with no further thermal treatment given to these samples, using the spray pyrolysis technique. The sprayingsolution was yttrium acetilacetonate disolved N,N-dimethylformamide. In addition, a solution of H2O–NH4OH was sprayed in parallel during the deposition process to improve the optical, structural, and electrical properties of the deposited films. The growth of a SiO2 layer between the yttrium oxide and the Si substrate during this deposition process resulted in interface state density values as low as 1010 eV−1 cm−2. An effective refractive index value of 1.86, and deposition rates close to 1 Å/ s were obtained. The Y2O3 films were polycrystalline with a crystalline cubic phase highly textured with the 400 direction normal to the Si surface. An effective dielectric constant up to 13, as well as a dielectric strength of the order of 0.2 MV/cm was obtained for 1000 Å thick as-deposited films incorporated in a metal-oxide-semiconductor structure.
dc.descriptionINVESTIGACION
dc.descriptionINSTITUTO POLITECNICO NACIONAL Y CONACYT
dc.languageen
dc.publisherAmerican Vacuum Society
dc.subjectTHIN FILMS
dc.subjectY2O3
dc.subjectSPRAY PYROLYSIS
dc.titleLow interface states and high dielectric constant Y2O3 films on Si substrates


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