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dc.creatorTabbal, Malek
dc.creatorKim, Taegon
dc.creatorWoolf, David Nathaniel
dc.creatorShin, Byungha
dc.creatorAziz, Michael J.
dc.date2010-08-12T15:14:49Z
dc.date2010
dc.date2010-08-12T15:14:49Z
dc.date.accessioned2012-06-08T13:26:52Z
dc.date.available2012-06-08T13:26:52Z
dc.date.issued2012-06-08
dc.identifierTabbal, Malek, Taegon Kim, David N. Woolf, Byungha Shin, and Michael J. Aziz. 2010. Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing. Applied Physics A: Materials Science & Processing 98(3): 589-594.
dc.identifier0947-8396
dc.identifierhttp://nrs.harvard.edu/urn-3:HUL.InstRepos:4341783
dc.identifier.urihttps://repositorio.leon.uia.mx/xmlui/123456789/38037
dc.descriptionSelenium supersaturated silicon layers were fabricated by pulsed excimer laser induced liquid-phase mixing of thin Se films on Si(001) wafers. Sufficiently low Se coverage avoids destabilization of rapid epitaxial solidification, resulting in supersaturated solid solutions free of extended defects, as shown by transmission electron microscopy. The amount of retained Se depends on the original film thickness, the laser fluence, and the number of laser pulses irradiating the same spot on the surface. Using this method, Se has incorporated into the topmost 300 nm of the silicon with a concentration of 0.1 at.%. Channeling Rutherford backscattering spectrometry measurements show that the substitutional fraction can be as high as 75% of the total retained Se. These alloys exhibit strong sub-band-gap absorption with optical absorption coefficient ranging up to about 104 cm−1, thus making them potential candidates for applications in Si-based optoelectronic devices.
dc.descriptionPhysics
dc.languageen_US
dc.publisherSpringer
dc.relationdoi:10.1007/s00339-009-5462-1
dc.relationApplied Physics a Materials Science and Processing
dc.titleFabrication and Sub-Band-Gap Absorption of Single-Crystal Si Supersaturated with Se by Pulsed Laser Mixing
dc.typeJournal Article


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