Show simple item record

dc.creatorBarvosa-Carter, William
dc.creatorAziz, Michael
dc.date2009-04-30T13:46:59Z
dc.date1997
dc.date.accessioned2012-06-08T02:09:06Z
dc.date.available2012-06-08T02:09:06Z
dc.date.issued2012-06-07
dc.identifierBarvosa-Carter, William and Michael J. Aziz. 1997. Effect of non-hydrostatic stress on kinetics and interfacial roughness during solid phase epitaxial growth in Si. Materials Research Society Symposia Proceedings 441: 621-628.
dc.identifier0272-9172
dc.identifierhttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2870607
dc.identifier.urihttps://repositorio.leon.uia.mx/xmlui/123456789/34212
dc.descriptionWe report preliminary <i>in-situ</i> time-resolved measurements of the effect of uniaxial stress on solid phase epitaxial growth in pure Si (001) for the case of stress applied parallel to the amorphous-crystal interface. The growth rate is reduced by the application of uniaxial compression, in agreement with previous results. Additionally, the velocity continues to decrease with time. This is consistent with interfacial roughening during growth under stress, and is supported by both reflectivity measurements and cross-sectional TEM observations. We present a new kinetically-driven interfacial roughening mechanism which is consistent with our observations.
dc.descriptionEngineering and Applied Sciences
dc.languageen_US
dc.publisherMaterials Research Society
dc.relationhttp://www.mrs.org/s_mrs/sec.asp?CID=1727&DID=38980
dc.relationhttp://www.seas.harvard.edu/matsci/people/aziz/publications/mja094.pdf
dc.relationMaterials Research Society Symposia Proceedings
dc.titleEffect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness during Solid Phase Epitaxial Growth in Si


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following Collection(s)

Show simple item record