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dc.creatorAziz, Michael
dc.creatorBarvosa-Carter, William
dc.date2009-04-20T20:28:20Z
dc.date2001
dc.date.accessioned2012-06-08T01:49:57Z
dc.date.available2012-06-08T01:49:57Z
dc.date.issued2012-06-07
dc.identifierBarvosa-Carter, William and Michael J. Aziz. 2001. Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si. Applied Physics Letters 79(3): 356-358.
dc.identifier0003-6951
dc.identifierhttp://nrs.harvard.edu/urn-3:HUL.InstRepos:2797369
dc.identifier.urihttps://repositorio.leon.uia.mx/xmlui/123456789/34136
dc.descriptionThe effect of externally applied in-phase stresses on the solid-phase epitaxial growth rate of both intrinsic and B-doped Si has been measured using time-resolved reflectivity. The data are described phenomenologically by a product of a function of concentration, an Arrhenius function of temperature, and a Boltzmann factor in the product of the stress and the activation strain V*, with V*<sub>11</sub>=(+0.14+/-0.04) and (+0.17+/-0.02) times the atomic volume, in intrinsic and B-doped material, respectively.
dc.descriptionEngineering and Applied Sciences
dc.languageen_US
dc.publisherAmerican Institute of Physics
dc.relationhttp://dx.doi.org/10.1063/1.1386399
dc.relationhttp://www.seas.harvard.edu/matsci/people/aziz/publications/mja132.pdf
dc.relationApplied Physics Letters
dc.titleTime-Resolved Measurements of Stress Effects on Solid-Phase Epitaxy of Intrinsic and Doped Si


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