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Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE 

McCamy, James W.; Leonard, John P.; Shin, Byungha; Aziz, Michael (Materials Research Society, 2012-06-07)
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Modeling RHEED Intensity Oscillations in Multilayer Epitaxy: Determination of the Ehrlich-Schwoebel Barrier in Ge(001) Homoepitaxy 

Aziz, Michael; Shin, Byungha (American Physical Society, 2012-06-07)
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Kinetic Energy Induced Smoothening and Delay of Epitaxial Breakdown in Pulsed-laser Deposition 

Shin, Byungha; Aziz, Michael (The American Physical Society, 2012-06-07)
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Comparison of Morphology Evolution of Ge(001) Homoepitaxial Films Grown by Pulsed Laser Deposition and Molecular Beam Epitaxy 

McCamy, James W.; Shin, Byungha; Leonard, John P.; Aziz, Michael (American Institute of Physics, 2012-06-07)
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On the Phase Shift of Reflection High Energy Electron Diffraction Intensity Oscillations during Ge(001) Homoepitaxy by Molecular Beam Epitaxy 

McCamy, James W.; Shin, Byungha; Leonard, John P.; Aziz, Michael (American Vacuum Society, 2012-06-07)

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Aziz, Michael (5)
Shin, Byungha (5)
Leonard, John P. (3)McCamy, James W. (3)Subjectelectron correlations (1)electron gas (1)elemental semiconductors (1)germanium (1)molecular beam epitaxial growth (1)monolayers (1)Monte Carlo methods (1)quantum dots (1)reflection high energy electron diffraction (1)semiconductor growth (1)... View MoreDate Issued2012 (5)Has File(s)No (5)

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