Repositorio Institucional de la UIA León

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Crystal Growth Kinetics of Boron Oxide Under Pressure 

Turnbull, David; Hays, James F.; Nygren, Eric; Aziz, Michael (American Institute of Physics, 2012-06-07)
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Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications for Point-Defect Mechanisms 

Aziz, Michael; Nygren, Eric; Lu, Guo-Quan (American Institute of Physics, 2012-06-07)
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Pressure-Enhanced Solid Phase Epitaxy: Implications for Point Defect Mechanisms 

Nygren, Eric; Lu, Guo-Quan; Aziz, Michael (Materials Research Society, 2012-06-07)
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Time-Resolved Reflectivity Measurement of The Pressure-Enhanced Crystallization Rate of Amorphous Si in a Diamond Anvil Cell 

Lu, Guo-Quan; Aziz, Michael; Nygren, Eric; Turnbull, David; White, C. Woody (Materials Research Society, 2012-06-07)
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Pressure dependence of arsenic diffusivity in silicon 

Hull, Robert; Jacobson, Dale C.; Poate, John M.; Turnbull, David; Aziz, Michael; Nygren, Eric (American Institute of Physics, 2012-06-07)

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Aziz, Michael (5)
Nygren, Eric (5)
Lu, Guo-Quan (3)Turnbull, David (3)Hays, James F. (1)Hull, Robert (1)Jacobson, Dale C. (1)Poate, John M. (1)White, C. Woody (1)Subjectactivation energy (1)amorphous state (1)boron oxides (1)crystal growth from melts (1)crystal- (1)crystallization (1)free energy (1)glass (1)high temperature (1)kinetics (1)... View MoreDate Issued2012 (5)Has File(s)No (5)

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