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Now showing items 1-9 of 9
Modeling a Growth Instability in Stressed Boron Doped Silicon
(Applied Computational Research Society; Nano science and technology institute, 2012-06-07)
Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects
(American Institute of Physics, 2012-06-07)
Modelling a Growth Instability in a Stressed Solid
(Institute of Physics, 2012-06-07)
Morphological Instability of Growth Fronts Due to Stress-Induced Mobility Variations
(American Institute of Physics, 2012-06-07)
Strain-Stabilized Solid Phase Epitaxy of Si–Ge on Si.
(Ameican Institute of Physics, 2012-06-07)
Time-Resolved Measurements of Stress Effects on Solid-Phase Epitaxy of Intrinsic and Doped Si
(American Institute of Physics, 2012-06-07)
Kinetically Driven Growth Instability in Stressed Solids
(The American Physical Society, 2012-06-07)
Effect of Non-Hydrostatic Stress on Kinetics and Interfacial Roughness during Solid Phase Epitaxial Growth in Si
(Materials Research Society, 2012-06-07)
Pressure Measurement at High Temperature Using Ten Sm:YAG Fluorescence Peaks
(American Institute of Physics, 2012-06-07)